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| 2N6520 2N6520 High Voltage Transistor * Collector-Emitter Voltage: VCEO= -350V * Collector Dissipation: PC (max)=625mW * Complement to 2N6517 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25 Junction Temperature Storage Temperature 1. Emitter 2. Base 3. Collector Value -350 -350 -5 -500 -250 0.625 5 50 -55 ~ 150 Units V V V mA mA W mW/C C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VCB= -250V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCE= -20V, IC= -10mA, f=20MHz VCB= -20V, IE=0, f=1MHz VEB= -0.5V, IC=0, f=1MHz VBE (off)= -2V, VCC= -100V IC= -50mA, IB1= -10mA VCC= -100V, IC= -50mA IB1=IB2= -10mA 40 20 30 30 20 15 Min. -350 -350 -5 -50 -50 Max. Units V V V nA nA 200 200 -0.30 -0.35 -0.50 -1 -0.75 -0.85 -0.90 -2 200 6 100 200 3.5 V V V V V V V V MHz pF pF ns ns VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) fT Cob CEB tON tOFF Base-Emitter On Voltage * Current Gain Bandwidth Product Output Capacitance Emitter-Base Capacitance Turn On Time Turn Off Time * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 2N6520 Typical Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 -10000 VCE = -20V IC = 10 IB VCE(sat) hFE, DC CURRENT GAIN 100 -1000 VBE(sat) 10 -100 1 -1 -10 -100 -1000 -10000 -10 -1 -10 -100 -1000 -10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 tD @ VBE(off)=-2.0V VCE(off) = -100V IC/IB= 5 o TJ=25 C tSTG 1000 VCE(off) = -100V t[ns] ,TIME t[ns] ,TIME tR 100 tF IC/IB= 5 IB1 = IB2 TJ=25 C o 100 10 -1 -10 -100 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Turn-On Time Figure 4. Turn-Off Time 3.0 2.5 100 R[mV/ C], THERMAL COEFFICIENTS IC/IB = 10 o o f=1MHz 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -1 -10 -100 Cib[pF], Cob[pF], CAPACITANCE -55 C to 125 C Cib R! VB for VBE -55 C to 25 C o o 10 Cob RVC for VCE(sat) -55 C to 125 C o o o 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Temperature Coefficients Figure 6. Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 2N6520 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VCE = -20V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 2N6520 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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